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PDF SLU60R2K3SJ Data sheet ( Hoja de datos )

Número de pieza SLU60R2K3SJ
Descripción N-Channel MOSFET
Fabricantes Maple Semiconductor 
Logotipo Maple Semiconductor Logotipo



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SLD60R2K3SJ / SLU60R2K3SJ
600V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
Features
- 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V
- Low gate charge ( typical 7nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
D
GS
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLD60R2K3SJ / SLU60R2K3SJ
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
600
2.3*
1.4*
6.0* 
±30
15
1
6
4.5
25
0.2
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLD60R2K3SJ / SLU60R2K3SJ
5
0.5
62
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
/W
/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 July. 2014

1 page




SLU60R2K3SJ pdf
Typical Characteristics
Figure 13: Avalanche energy
Figure 2: Transfer Characteristics @VDS=20V
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 July. 2014

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