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PDF DG640 Data sheet ( Hoja de datos )
| Número de pieza | DG640 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | DGME | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DG640 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DG640
N 沟道增强型场效应晶体管
N-CHANNEL ENHANCEMENT MODE MOSFET
版本号：V1.0
产品概述 General Description
DG640是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面工
艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产品能
应用于多种功率开关电路，使得电源能效更高，系统更加小型化。
DG640 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-
electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce
the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for higher efficiency and system miniaturization.
主要参数 MAIN CHARACTERISTICS
VDSS
ID
RDS(ON)
Crss
200
18
0.2
22
V
A
Ω
pF
符号 Symbol
封装 Package
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1 page  
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
图1. 输出特性曲线
Fig. 1 On-State Characteristics
图2. 传输特性曲线
Fig. 2 Transfer Characteristics
图3. 击穿电压随温度变化曲线
Fig. 3 Breakdown Voltage Variation vs Temperature
图4. 导通电阻随温度变化曲线
Fig. 4 On-Resistance Variation vs Temperature
图5. 电容特性曲线
图6. 栅电荷特性曲线
Fig. 5 Capacitance Characteristics
Fig. 6 Gate Charge Characteristics
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DG640.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DG640 | N-CHANNEL ENHANCEMENT MODE MOSFET | DGME |
| DG641 | Low On-Resistance Wideband/Video Switches |  Vishay Siliconix |
| DG642 | Low On-Resistance Wideband/Video Switches | Vishay Siliconix |
| DG643 | Low On-Resistance Wideband/Video Switches | Vishay Siliconix |
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