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부품번호 | TSB20N65S 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Truesemi | ||
로고 | |||
TSP20N65S,TSF20N65S, TSB20N65S
650V N-Channel MOSFET
September, 2013
SJ-FET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for
outstanding low on-resistance and lower gate charge
performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy. SJ-
FET is suitable for various AC/DC power conversion
inswitching mode operation for higher efficiency.
Features
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
TSB20N65S
20*
10*
60*
151
1.5
TSP20N65S
650
20
10
60
±30
600
20
20.5
4.5
151
1.67
-55 to +150
300
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
TSB20N65S
1.5
0.5
75
TSP20N65S
0.6
--
62
TSF20N65S
20*
10*
60*
35
0.3
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
TSF20N65S
3.6
--
62
Unit
℃/W
℃/W
℃/W
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0
Typical Performance Characteristics
VSD (V)
Figure 7: Body-Diode Characteristics
Qg (nC)
Figure 8: Gate-Charge Characteristics
VDS (V)
Figure 9: Capacitance Characteristics
C=f(VDS), VGS=0V, f=1MHz
VDS (V)
Figure 10: Coss stored Energy
VDS (V)
Figure 11: Maximum Forward Biased
Safe Operating Area
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0
Pulse Width (s)
Figure 12: Single Pulse Power Rating
Junction to Case
4페이지 ©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ TSB20N65S.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSB20N65S | N-Channel MOSFET | Truesemi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |