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PDF TSU65R2K3S1 Data sheet ( Hoja de datos )

Número de pieza TSU65R2K3S1
Descripción N-Channel MOSFET
Fabricantes Truesemi 
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TSD65R2K3S1/TSU65R2K3S1
650V 2.1A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 700V @TJ = 150
• Typ. RDS(on) = 2.1Ω
• Ultra Low gate charge (typ. Qg = 7nC)
• 100% avalanche tested
TSD65R2K3S1
TSU65R2K3S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
650
2.1
1.3
6*
±30
11
0.4
0.06
15
22.5
0.8
-55 to +150
300
Value
5.6
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Unit
/W
/W
/W
www.truesemi.com

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TSU65R2K3S1 pdf
Typical Performance Characteristics
TCASE (°C)
Figure 13: Avalanche energy
Figure 14: Transfer Characteristics @VDS=20V
© 2015 Truesemi Semiconductor Corporation
5
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