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부품번호 | TSU60R650S1 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Truesemi | ||
로고 | |||
TSD60R650S1/TSU60R650S1
600V 7A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.58Ω
• Ultra Low gate charge (typ. Qg = 25nC)
• 100% avalanche tested
TSD60R650S1
TSU60R650S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
600
7
5
11
±30
86
1.7
43
4.5
63
0.8
-55 to +150
300
Value
1.2
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Unit
℃/W
℃/W
℃/W
www.truesemi.com
Typical Performance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS (V)
Figure 8: Capacitance Characteristics
VDS (V)
Figure 9: Coss stored Energy
VDS (V)
Figure 10: Maximum Forward Biased Safe
Operating Area Tc=25 (°C),
TCASE (°C)
Figure 11: Avalanche energy
© 2015 Truesemi Semiconductor Corporation
TCASE (°C)
Figure 12: Current De-rating
4
www.truesemi.com
4페이지 Test circuits
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
© 2015 Truesemi Semiconductor Corporation
7
www.truesemi.com
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ TSU60R650S1.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSU60R650S1 | N-Channel MOSFET | Truesemi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |