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부품번호 | TSU80R1K3S1 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Truesemi | ||
로고 | |||
TSD80R1K3S1/TSU80R1K3S1
800V 4A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 850V @TJ = 150 ℃
• Typ. RDS(on) = 1.1Ω
• Ultra Low gate charge (typ. Qg = 15nC)
• 100% avalanche tested
TSD80R1K3S1
TSU80R1K3S1
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current – Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt Peak Diode Recovery dv/dt
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθCS Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation
Value
800
4*
2.5*
11*
±30
46
1
0.2
15
37
0.8
-55 to +150
300
Value
3.41
0.5
62
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Unit
℃/W
℃/W
℃/W
www.truesemi.com
Typical Performance Characteristics
© 2015 Truesemi Semiconductor Corporation
4
www.truesemi.com
4페이지 Test circuits
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
Switching times test
circuit for inductive
load
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
© 2015 Truesemi Semiconductor Corporation
7
www.truesemi.com
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ TSU80R1K3S1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSU80R1K3S1 | N-Channel MOSFET | Truesemi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |