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부품번호 | TSI10N60M 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Truesemi | ||
로고 | |||
TSB10N60M / TSI10N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using True semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V
- Low gate charge ( typical 48nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
D
D2-PAK
GS
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
TSB10N60M / TSI10N60M
600
10
6.0
40
±30
709
10
16.2
4.5
162
1.30
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
http://www.truesemi.com
Typ Max Units
-- 0.77 ℃/W
-- 0.5 ℃/W
-- 62.5 ℃/W
Rev. 00 October . 2012
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 ※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 5.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
100 s
101
1 ms
10 ms
100 ms
DC
100
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
※ Notes :
1. Zθ JC(t) = 0.77 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
PDM
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
http://www.truesemi.com
Rev. 00 October . 2012
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부품번호 | 상세설명 및 기능 | 제조사 |
TSI10N60M | N-Channel MOSFET | Truesemi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |