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PDF TSI10N65M Data sheet ( Hoja de datos )
| Número de pieza | TSI10N65M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
| Logotipo |  |
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TSB10N65M / TSI10N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using True semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V
- Low gate charge ( typical 48nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
D
D2-PAK
GS
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
TSB10N65M / TSI10N65M
650
10
6.0
40
±30
709
10
16.2
4.5
162
1.30
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 0.77
-- 0.5
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
http://www.truesemi.com
Rev. 00 October . 2012
1 page  
Typical Characteristics (Continued)
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
※ Notes :
1. Zθ JC(t) = 0.77 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
PDM
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-1. Transient Thermal Response Curve for TSB10N65M
100 D=0.5
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
10-2
※ Notes :
1. Zθ JC(t) = 2.4 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
PDM
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for TSI10N65M
http://www.truesemi.com
Rev. 00 October . 2012
5 Page | ||
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| PDF Descargar | [ Datasheet TSI10N65M.PDF ] | |
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