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부품번호 | HRS50N06K 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
HRS50N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 40 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 11.5 Pȍ (Typ.) @VGS=10V
100% Avalanche Tested
July 2014
BVDSS = 60 V
RDS(on) typ Pȍ
ID = 40 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
60
40 *
28 *
140 *
ρ20
120
2.9
29
0.19
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
5.2
62.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͥ͑͢͡
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Note :
1. VGS = 0 V
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
102
100 Ps
1 ms
10 ms
101 100 ms
DC
100
10-1
10-2
10-1
* Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100 101
V , Drain-Source Voltage [V]
DS
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. I = 15 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
175
D=0.5
100 0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
* Notes :
1. ZTJC(t) = 5.2 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
single pulse
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͥ͑͢͡
4페이지 Package Dimension
{vTYYWmG
±0.20
ij±0.20
±0.20
2.54±0.20
0.70±0.20
1.47max
2.54typ
2.54typ
2.76±0.20
0.80±0.20
0.50±0.20
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͥ͑͢͡
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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HRS50N06K | N-Channel MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |