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부품번호 | HFU5N70S 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
Jan 2013
HFD5N70S / HFU5N70S
700V N-Channel MOSFET
BVDSS = 700 V
RDS(on) typ ȍ
ID = 3.8 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD5N70S
1
2
3
HFU5N70S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ഒ)
– Continuous (TC = 100ഒ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
3.8
2.2
15.2
ρ30
160
3.8
9.1
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ఁ) *
Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
91
0.73
-55 to +150
300
Units
9
$
$
$
9
P-
$
P-
9QV
:
:
:ഒ
ഒ
ഒ
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.37
50
110
Units
ഒ:
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡
Typical Characteristics (continued)
1.2
1.1
1.0
0.9 * Note :
1. VGS = 0 V
2. I = 250 PA
D
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
10 Ps
101
100 Ps
1 ms
10 ms
100 ms
100 DC
10-1
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Note :
1. VGS = 10 V
2. ID = 1.9 A
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 8. On-Resistance Variation
vs Temperature
4
3
2
1
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
100
D=0.5
0.2
10-1
0.1
0.05
* Notes :
1. ZTJC(t) = 1.37 oC/W Max.
2. Duty Factor, D=t /t
12
3. TJM - TC = PDM * ZTJC(t)
0.02
0.01
10-2
10-5
PDM
single pulse
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡
4페이지 Package Dimension
{vTY\YG
6.6±0.2
5.35±0.15
2.3±0.1
0.5±0.05
0.8±0.2
0.6±0.2
2.3typ
2.3typ
1.2±0.3
0.05+-00..015
0.5+-00..015
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ HFU5N70S.PDF 데이터시트 ] |
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