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부품번호 | HFP730F 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
Dec 2016
HFP730F / HFS730F
400V N-Channel MOSFET
Features
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
100% Avalanche Tested
RoHS Compliant
HFP730F
TO-220
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
400
6
0.8
13
HFS730F
TO-220F
Symbol
Unit
V
A
ȍ
nC
S
D
G
S
D
G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
6.0 6.0 *
3.6 3.6 *
24 24 *
ρ30
250
6.0
7.6
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
76
0.61
29
0.23
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
1.65
0.5
62.5
TO-220F
4.3
--
62.5
Unit
/W
/W
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣͧ͑͢͡
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
101 is Limited by R DS(on)
10 Ps
100 Ps
1 ms
100
10 ms
10-1
10-2
100
Notes :
1.
T
C
=
25
oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
100 ms
DC
103
Figure 9-1. Maximum Safe Operating Area
for TO-220
6
5
4
3
2
1
0
25 50 75 100 125
T , Case Temperature [oC]
C
Figure 10. Maximum Drain Current
vs Case Temperature
150
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. ID = 3 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
102
Operation in This Area
101 is Limited by R DS(on)
10 Ps
100 Ps
1 ms
100
10 ms
10-1
10-2
100
Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
100 ms
DC
103
Figure 9-2. Maximum Safe Operating Area
for TO-220F
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣͧ͑͢͡
4페이지 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣͧ͑͢͡
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |