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부품번호 | HFW10N65S 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
July 2016
HFW10N65S
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ ȍ
ID = 9.2 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 29 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
D2-PAK
D
G
S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
9.2
5.5
36.8
ρ30
650
9.2
15.6
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ଇ) *
Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
156
1.25
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ଇ
ଇ
ଇ
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.8
40
62.5
Units
ഒ:
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Typical Characteristics (continued)
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 Ps
100 Ps
101 1 ms
10 ms
100 ms
100 DC
10-1
10-2
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. V = 10 V
GS
2. ID = 4.6 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
100
D=0.5
10-1
10-2
0.2
0.1
0.05
0.02
0.01
10-5
* Notes :
1. ZTJC(t) = 0.8 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
single pulse
PDM
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
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4페이지 Package Dimension
kYTwhrG
O{vTY]ZPG
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͧ͑͢͡
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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HFW10N65S | N-Channel MOSFET | SemiHow |
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