2N7637-GA Datasheet PDF - GeneSiC
| Part Number | 2N7637-GA | |
| Description | Junction Transistor | |
| Manufacturers | GeneSiC | |
| Logo |  |
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There is a preview and 2N7637-GA download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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2N7637-GA
Normally – OFF Silicon Carbide
Junction Transistor
Features
• 210°C maximum operating temperature
• Electrically Isolated Base Plate
• Gate Oxide Free SiC Switch
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Compatible with 5 V TTL Gate Drive
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of RDS,ON
• Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
Package
• RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
170 mΩ
20 A
110
D
G
G DS
S
TO – 257 (Isolated Base-plate Hermetic Package)
Applications
• Down Hole Oil Drilling
• Geothermal Instrumentation
• Solenoid Actuators
• General Purpose High-Temperature Switching
• Amplifiers
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the 2N7637-GA ..................................................................................................................5
Section VI: Package Dimensions: ...................................................................................................................8
Section VII: SPICE Model Parameters ............................................................................................................9
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Symbol
VDS
ID
IGM
RBSOA
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
SCSOA
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
TJ = 210°C, TC = 25°C
TVJ = 210°C, IG = 1.25 A,
Clamped Inductive Load
TVJ = 210°C, IG = 1.25 A, VDS = 400 V,
Non Repetitive
TJ = 210°C, TC = 25°C
Values
600
20
1.25
ID,max = 20
@ VDS ≤ VDSmax
>20
30
40
80
-55 to 210
Unit
V
A
A
A
µs
V
V
W
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 8
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2N7637-GA
Section V: Driving the 2N7637-GA
The 2N7637-GA is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be
driven by different drive topologies depending on the intended application.
Table 1: Estimated Power Consumption and switching frequencies for various Gate Drive topologies.
Drive Topology
Gate Drive Power Switching
Consumption
Frequency
Simple TTL
High
Low
Constant Current
Medium
Medium
High Speed – Boost Capacitor
Medium
High
High Speed – Boost Inductor
Low
High
Proportional
Lowest
Medium
Pulsed Power
Medium
N/A
A: Simple TTL Drive
The 2N7637-GA may be driven by 5 V TTL logic using a simple current amplification stage. The current amplifier output current must meet or
exceed the steady state gate current, IG,steady, required to operate the 2N7637-GA. An external gate resistor RG, shown in the
Figure 11 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be
calculated from the equation below. The value of VEC,sat can be taken from the PNP datasheet, a partial list of high-temperature PNP and NPN
transistors options is given below. High-temperature MOSFETs may also be used in the topology.
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Inverting 5 V
Current
Boost
Stage
TTL
Gate Signal
PNP
IG,steady
SiC SJT
G
0/5V
TTL i/p
inverted
0/5V
TTL o/p
NPN
RG
D
S
Figure 11: Simple TTL Gate Drive Topology
Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving
BJT Part Number
Type
Tj,max (°C)
PHPT60603PY
PHPT60603NY
2N2222
2N6730
2N2905
2N5883
2N5885
PNP
NPN
NPN
PNP
PNP
PNP
NPN
175
175
200
200
200
200
200
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 5 of 8
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N7637-GA electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N7637-GA.PDF Datasheet ] | |
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