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2N7636-GA 데이터시트 PDF




GeneSiC에서 제조한 전자 부품 2N7636-GA은 전자 산업 및 응용 분야에서
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부품번호 2N7636-GA 기능
기능 Junction Transistor
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2N7636-GA 데이터시트, 핀배열, 회로
2N7636-GA
Normally OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Electrically Isolated Base Plate
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
425 mΩ
10 A
110
S
G
D
G
SMD0.5 / TO 276 (Hermetic Package)
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
D
S
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the 2N7636-GA ..................................................................................................................6
Section VI: Package Dimensions ....................................................................................................................9
Section VII: SPICE Model Parameters ......................................................................................................... 10
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25 °C
TVJ = 225°C, IG = 0.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 0.5 A, VDS = 400 V,
Non Repetitive
TC = 25 °C, tp > 100 ms
Value
600
10
0.5
ID,max = 10
@ VDS ≤ VDSmax
>20
30
25
125
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Notes
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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2N7636-GA pdf, 반도체, 판매, 대치품
2N7636-GA
Figure 7: Typical Gate Source Saturation Voltage
B: Dynamic Characteristic Figures
Figure 8: Typical Blocking Characteristics
Figure 9: Input, Output, and Reverse Transfer Capacitance
Figure 10: Output Capacitance Stored Energy
Figure 11: Typical Switching Times and Turn On Energy
Losses vs. Temperature
Figure 12: Typical Switching Times and Turn Off Energy
Losses vs. Temperature
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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2N7636-GA 전자부품, 판매, 대치품
2N7636-GA
B: High Speed Driving
For ultra high speed 2N7636-GA switching (tr, tf < 20 ns) while maintaining low gate drive losses the supplied gate current should include a
positive current peak during turn-on, a negative voltage peak during turn-off, and continuous gate current IG to remain on.
An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge for turn-on, QG, is supplied by a burst of high
gate current until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged. Ideally, the burst should terminate
when the drain voltage has fallen to its on-state value in order to avoid unnecessary drive losses. A negative voltage peak is recommended for
the turn-off transition in order to ensure that the gate current is not being supplied under high dV/dt due to the Miller effect. While satisfactory
turn off can be achieved with VGS = 0 V, a negative VGS value may be used in order to speed up the turn-off transition.
B:1: High Speed, Low Loss Drive with Boost Capacitor
The 2N7636-GA may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology in which multiple voltage levels, a gate
resistor, and a gate capacitor are used to provide current peaks at turn-on and turn-off for fast switching and a continuous gate current while in
on-state. As shown in Figure 16, in this topology two gate driver ICs are utilized. An external gate resistor RG is driven by a low voltage driver
to supply the continuous gate current throughout on-state.and a gate capacitor CG is driven at a higher voltage level to supply a high current
peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this
topology is commercially available for high and low-side driving, its datasheet provides additional details about this drive topology.
VGH
Gate Signal
VGL
CG
RG
IG G
Gate
SiC SJT
D
S
Figure 16: High Speed, Low Loss Drive with Boost Capacitor Topology
B:2: High Speed, Low Loss Drive with Boost Inductor
A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the 2N7636-GA at high-speed. It utilizes a gate drive inductor
instead of a capacitor to provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a specified IG,on
current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 17. After turn on,
while the device remains on the necessary steady state gate current IG,steady is supplied from source VCC through RG. Please refer to the article
“A current-source concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional information on this
driving topology.3
VCC
S1
VCC
S2
VEE
S3
L
RG
S4
SiC SJT D
G
S
VEE
Figure 17: High Speed, Low-Loss Driver with Boost Inductor Topology
3 Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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2N7636-GA

Junction Transistor

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