PDF 2N7638-GA Data sheet ( Hoja de datos )

Número de pieza	2N7638-GA
Descripción	Junction Transistor
Fabricantes	GeneSiC
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No Preview Available ! 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Electrically Isolated Base Plate  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package  RoHS Compliant VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 170 mΩ 20 A 110 S G D G SMD0.5 / TO – 276 (Hermetic Package) Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actuators  General Purpose High-Temperature Switching  Amplifiers  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC) D S Table of Contents Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the 2N7638-GA ..................................................................................................................5 Section VI: Package Dimensions: ...................................................................................................................8 Section VII: SPICE Model Parameters ............................................................................................................9 Section I: Absolute Maximum Ratings Parameter Drain – Source Voltage Continuous Drain Current Continuous Gate Current Turn-Off Safe Operating Area Symbol VDS ID IGM RBSOA Short Circuit Safe Operating Area Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Operating and Storage Temperature SCSOA VGS VDS Ptot Tj, Tstg Conditions VGS = 0 V TJ = 225°C, TC = 25°C TVJ = 225°C, IG = 1.25 A, Clamped Inductive Load TVJ = 225°C, IG = 1.25 A, VDS = 400 V, Non Repetitive TJ = 225°C, TC = 25°C Values 600 20 1.25 ID,max = 20 @ VDS ≤ VDSmax >20 30 40 200 -55 to 225 Unit V A A A µs V V W °C Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Pg 1 of 8 1 page 2N7638-GA Section V: Driving the 2N7638-GA The 2N7638-GA is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be driven by different drive topologies depending on the intended application. Table 1: Estimated Power Consumption and switching frequencies for various Gate Drive topologies. Drive Topology Gate Drive Power Switching Consumption Frequency Simple TTL High Low Constant Current High Speed – Boost Capacitor High Speed – Boost Inductor Medium Medium Low Medium High High Proportional Lowest Medium Pulsed Power Medium N/A A: Simple TTL Drive The 2N7638-GA may be driven by 5 V TTL logic using a simple current amplification stage. The current amplifier output current must meet or exceed the steady state gate current, IG,steady, required to operate the 2N7638-GA. An external gate resistor RG, shown in the Figure 11 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be calculated from the equation below. The value of VEC,sat can be taken from the PNP datasheet, a partial list of high-temperature PNP and NPN transistors options is given below. High-temperature MOSFETs may also be used in the topology. Inverting 5 V Current Boost Stage TTL Gate Signal PNP IG,steady SiC SJT G 0/5V TTL i/p inverted 0/5V TTL o/p NPN RG D S Figure 11: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Type Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 200 Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Pg 5 of 8 5 Page

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