Datasheet.kr   

GA05JT03-46 데이터시트 PDF




GeneSiC에서 제조한 전자 부품 GA05JT03-46은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 GA05JT03-46 자료 제공

부품번호 GA05JT03-46 기능
기능 Junction Transistor
제조업체 GeneSiC
로고 GeneSiC 로고


GA05JT03-46 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 11 페이지수

미리보기를 사용할 수 없습니다

GA05JT03-46 데이터시트, 핀배열, 회로
GA05JT03-46
Normally OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Package
RoHS Compliant
D
SG
TO-46
VDS =
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
300 V
240 mΩ
9A
110
D
G
S
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Electrical Characteristics...............................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA05JT03-46...............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 10
Section VII: SPICE Model Parameters ......................................................................................................... 11
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 0.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 0.5 A, VDS = 200 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Value
300
5.8
0.5
ID,max = 9
@ VDS ≤ VDSmax
>20
30
25
20
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Notes
Fig. 21
Fig. 19
Fig. 16
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 10




GA05JT03-46 pdf, 반도체, 판매, 대치품
GA05JT03-46
Figure 7: Typical Gate Source Saturation Voltage
B: Dynamic Characteristics
Figure 8: Typical Blocking Characteristics
Figure 9: Input, Output, and Reverse Transfer Capacitance
Figure 10: Energy stored in Output Capacitance
Figure 11: Typical Turn On Energy Losses and Switching
Times vs. Temperature
Figure 12: Typical Turn Off Energy Losses and Switching
Times vs. Temperature
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 4 of 10

4페이지










GA05JT03-46 전자부품, 판매, 대치품
GA05JT03-46
Section V: Driving the GA05JT03-46
The GA05JT03-46 is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be
driven by different drive topologies depending on the intended application.
Table 1: Estimated Power Consumption and switching frequencies for various Gate Drive topologies.
Drive Topology
Gate Drive Power Switching
Consumption
Frequency
Simple TTL
High
Low
Constant Current
High Speed Boost Capacitor
High Speed Boost Inductor
Medium
Medium
Low
Medium
High
High
Proportional
Lowest
Medium
Pulsed Power
Medium
N/A
A: Simple TTL Drive
The GA05JT03-46 may be driven by 5 V TTL logic by using a simple current amplification stage. The current amplifier output current must
meet or exceed the steady state gate current, IG,steady, required to operate the GA05JT03-46. An external gate resistor RG, shown in the
Figure 22 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be
calculated from the equation below. The values of hFE and VGS,sat may be read from Figure 6 and Figure 7, respectively. VEC,sat can be taken
from the PNP datasheet, a partial list of high-temperature PNP and NPN transistors options is given below. High-temperature MOSFETs may
also be used in the topology.
Inverting 5 V
Current
Boost
Stage
TTL
Gate Signal
PNP
IG,steady
SiC SJT
G
0/5V
TTL i/p
inverted
0/5V
TTL o/p
NPN
RG
D
S
Figure 22: Simple TTL Gate Drive Topology
Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving
BJT Part Number
Type
Tj,max (°C)
PHPT60603PY
PHPT60603NY
2N2222
2N6730
2N2905
2N5883
2N5885
PNP
NPN
NPN
PNP
PNP
PNP
NPN
175
175
200
200
200
200
200
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 7 of 10

7페이지


구       성 총 11 페이지수
다운로드[ GA05JT03-46.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
GA05JT03-46

Junction Transistor

GeneSiC
GeneSiC

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵