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PDF GA080TH65-CAU Data sheet ( Hoja de datos )
| Número de pieza | GA080TH65-CAU | |
| Descripción | Silicon Carbide Thyristor | |
| Fabricantes | GeneSiC | |
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Silicon Carbide Thyristor
Features
• 6500 V Asymmetric SiC NPNP Thyristor
• 250 °C operating temperature
• Fast turn on characteristics
• Lowest in class Qrr/IT(AVM)
Applications
• Grid Tied Solar Inverters
• Wind Power Inverters
• HVDC Power Conversion
• Utility Scale Power Conversion
• Trigger Circuits/Ignition Circuits
Maximum Ratings
Parameter
Repetitive peak forward voltage
Repetitive peak reverse voltage
Maximum average on-state current
RMS on-state current
Operating and storage temperature
Electrical Characteristics
Parameter
Maximum peak on state voltage
Anode-cathode threshold voltage
Anode-cathode slope resistance
Leakage current
Gate trigger current
Holding current
Rise time
Delay time
Reverse recovery charge
Recovered charge, 50% chord
Reverse recovery current
Circuit commutated turn-off time
Electrical Datasheet GA080TH65-CAU
VFBM
IT(AVM)
Qrr
= 6500 V
= 80 A
= 4.2 µC
Symbol
VFBM
VRBM
IT(AVM)
IT(RMS)
Tj, Tstg
Conditions
Tj = 25 °C
Tj = 25 °C
TC ≤ 125 °C
TC ≤ 125 °C
Values
6500
50
80
139
-55 to 250
Unit
V
V
A
A
°C
Symbol
VKA(ON)
VKA(TO)
RAK
IL
IGT
IH
tR
tD
Qrr
Qra
Irm
tq
Conditions
IK = -80 A, Tj = 25 °C
IK = -80 A, Tj = 150 °C
Tj = 25 °C (150 °C)
Tj = 25 °C (150 °C), IK = -80 A
VKA = -6500 V, VGA = 0 V, Tj = 25 °C
VKA = -6500 V, VGA = 0 V, Tj = 150 °C
Tj = 25 °C, tP = 10 µs
Tj = 25 °C
IG = -3 A, VKA = -2200 V
IK = -80 A, Tj = 25 °C
dI/dt = 430 A/us, IK = -70 A, VKA = 20 V
dV/dt(re-app) = -460 V/us, Tj = 25 °C
min.
Values
typ.
-3.70
-3.45
-3.0(-2.7)
6.0(6.3)
15
50
-100
tbd
190
50
4.2
2.3
20
10.1
max.
Unit
V
V
mΩ
µA
mA
mA
ns
ns
µC
µC
A
µs
November 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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| PDF Descargar | [ Datasheet GA080TH65-CAU.PDF ] | |
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