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PDF ALD110808A Data sheet ( Hoja de datos )
| Número de pieza | ALD110808A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Advanced Linear Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ALD110808A (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD110808/ALD110808A/ALD110908/ALD110908A
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= +0.80V
GENERAL DESCRIPTION
ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision
monolithic quad/dual enhancement mode N-Channel MOSFETs matched
at the factory using ALD’s proven EPAD® CMOS technology. These de-
vices are intended for low voltage, small signal applications.
These MOSFET devices are built on the same monolithic chip, so they
exhibit excellent temperature tracking characteristics. They are versatile
as circuit elements and are useful design component for a broad range of
analog applications. They are basic building blocks for current sources,
differential amplifier input stages, transmission gates, and multiplexer
applications. For most applications, connect the V- and IC pins to the most
negative voltage in the system and the V+ pin to the most positive voltage.
All other pins must have voltages within these voltage limits at all times.
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stage
• Voltage comparator
• Voltage bias circuits
• Sample and Hold
• Analog inverter
• Level shifters
• Source followers and buffers
• Current multipliers
• Analog switches / multiplexers
ALD110808/ALD110908 devices are built for minimum offset voltage and
differential thermal response, and they are suited for switching and ampli-
fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias
current, low input capacitance and fast switching speed are desired. As
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
These devices are suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the
device at a drain current of 3mA and input leakage current of 30pA at
25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +0.80V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match to 2mV and 10mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD110808ASCL ALD110808APCL ALD110908ASAL ALD110908APAL
ALD110808SCL ALD110808PCL ALD110908SAL ALD110908PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
PIN CONFIGURATION
ALD110808
IC*
GN1
DN1
S12
V-
DN4
GN4
IC*
V-
1
2
M1
3
4
5 V-
6 M4
7
8 V-
V-
16 IC*
M2
V+
15 GN2
14 DN2
13 V+
12 S34
M 3 11 DN3
10 GN3
V- 9 IC*
SCL, PCL PACKAGES
ALD110908
V-
IC* 1
V-
8 IC*
GN1 2
DN1 3
S12 4
M1 M2
V-
7 GN2
6 DN2
5 V-
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
1 page  
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
5
TA = +25°C
4
VGS-VGS(TH)=+5V
VGS-VGS(TH)=+4V
3
2
1
0
0
VGS-VGS(TH)=+3V
VGS-VGS(TH)=+2V
VGS-VGS(TH)=+1V
2 46 8
DRAIN-SOURCE ON VOLTAGE (V)
10
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
2500
TA = 25°C
2000
1500
1000
VGS = VGS(TH) +4V
500
0
10
VGS = VGS(TH) +6V
100 1000
DRAIN-SOURCE ON CURRENT (µA)
10000
FORWARD TRANSFER CHARACTERISTICS
20
15
10
5
0
-4
TA = 25°C
VDS = +10V
VGS(TH) = -3.5V
VGS(TH) = -1.3V
VGS(TH) = -0.4V
VGS(TH) = 0.0V
VGS(TH) = +0.2V
VGS(TH) = +1.4V
VGS(TH) = +0.8V
-2 0
2
4
6
8
GATE-SOURCE VOLTAGE (V)
10
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
-50
-25 0
25 50 75 100
AMBIENT TEMPERATURE (°C)
125
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
100000
10000
TA = +25°C
VDS=+0.1V
VGS(TH)=0.0V
1000
100
VGS(TH)=-1.3V
10
1
0.1
0.01
VGS(TH)=-3.5V
VGS(TH)=+0.2V VGS(TH)=+0.8V
-4 -3 -2 -1 0 1 2
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
1000
100
VDS=0.1V
Slope~= 110mV/decade
10
1
0.1
0.01
VGS(th)
-0.5
VGS(th)
-0.4
VGS(th)
-0.3
VGS(th)
-0.2
VGS(th)
-0.1
GATE-SOURCE VOLTAGE (V)
VGS(th)
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
5 of 11
5 Page 
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
E E1
D
S
b
b1
A2 A
A1 L
e
Dim
A
A1
A2
b
b1
c
D-8
E
E1
e
e1
L
S-8
ø
Millimeters
Min
3.81
Max
5.08
0.38
1.27
1.27
2.03
0.89
1.65
0.38
0.51
0.20
0.30
9.40
11.68
5.59
7.11
7.62
8.26
2.29
2.79
7.37
7.87
2.79
3.81
1.02
2.03
0° 15°
Inches
Min
0.105
Max
0.200
0.015
0.050
0.050
0.080
0.035
0.065
0.015
0.020
0.008
0.012
0.370
0.460
0.220
0.280
0.300
0.325
0.090
0.110
0.290
0.310
0.110
0.150
0.040
0.080
0° 15°
c
e1 ø
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet ALD110808A.PDF ] | |
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