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PDF SW20N65K Data sheet ( Hoja de datos )
| Número de pieza | SW20N65K | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
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SAMWIN
SW20N65K
N-channel TO-220/TO-220F MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max0.19Ω)@VGS=10V
■ Gate Charge (Typical 60nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220
TO-220F
12
3
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BVDSS : 650V
ID : 20A
RDS(ON) :0.19Ω
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 20N65K
SW F 20N65K
Marking
SW20N65K
SW20N65K
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Value
TO-220
TO-220F
650
20*
12.6*
80
± 30
500
24
5
341.5
35.9
2.7 0.3
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-220F
0.36 3.48
55.7 47.3
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
June. 2014. Rev.1.0
1/6
1 page  
SAMWIN
SW20N65K
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
4mA
VGS
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig. 13. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
June. 2014. Rev.1.0
5/6
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