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PDF SW4N60K Data sheet ( Hoja de datos )
| Número de pieza | SW4N60K | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW4N60K
N-channel TO-220F/I-PAK/D-PAK MOSFET
Features
TO-220F TO-251 TO-252
■ High ruggedness
■ RDS(ON) (Max 1.15Ω)@VGS=10V
■ Gate Charge (Typ 13nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
123
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
Order Codes
BVDSS : 600V
ID : 4A
RDS(ON) : 1.15Ω
2
1
3
Item Sales Type
1 SW F 4N60
2 SW I 4N60
3 SW D 4N60
Marking
SW4N60K
SW4N60K
SW4N60K
Package
TO-220F
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220F TO-251 TO-252
600
4*
2.5*
16
± 30
50
5
5
23.5 106.4 101.4
0.19 0.85 0.81
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
TO-220F
5.31
Value
TO-251
1.18
TO-252
1.23
49.5 82.8 84.9
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 4.0
1/6
1 page  
SAMWIN
Fig. 13. Capacitance Characteristics
SW4N60K
Fig. 14. Gate charge test circuit & waveform
Same type
as DUT
VGS
0.8mA
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig. 15. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 4.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW4N60K.PDF ] | |
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