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부품번호 | SW9N90 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | SEMIPOWER | ||
로고 | |||
SAMWIN
SW9N90
N-channel MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 1.45 Ω)@VGS=10V
■ Gate Charge (Typ 60nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-3P
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 900V
ID : 9.0A
RDS(ON) : 1.45ohm
2
1
3
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Thermal characteristics
Symbol
Parameter
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
SW9n90
TO-3P
900
9.0
5.6
36
±30
850
25
4.5
240
1.92
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Min.
0.24
Value
Typ.
40
Max.
0.52
Unit
oC/W
oC/W
oC/W
Mar. 2011. Rev. 3.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
SAMWIN
SW9N90
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
1.1
1.0
0.9 Notes:
1.
2.
IVDG=S =2500VµA
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Fig. 9. Maximum drain current vs.
case temperature.
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [ ]
Fig. 8. On resistance variation
vs. junction temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1.
2.
VIDG=S
= 10 V
4.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Fig. 10. Maximum safe operating area
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by RDS(on)
10 µs
100 µs
1 ms
10 ms
DC
Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e5P0uolCse
101 102
VDS, Drain-Source Voltage [V]
103
Fig. 11. Transient thermal response curve
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
single pulse
N otes :
1.
2.
3.
ZD θu JtCy(
T JM -
t) = 0.45 /W M
Fa
TC
ct
=
or,
PD
MD*=Zt 1θ/
t2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
4/7
4페이지 SAMWIN
SW9N90
REVISION HISTORY
Revision No.
Changed Characteristics
REV 1.0 Origination, First Release
REV 2.0 Updated the format of datasheet and added
Order Codes.
REV 3.0 Confirmed the VTH characteristic
Responsible
Alice Nie
Alice Nie
Alice Nie
Date
2007.12.05
2011.03.24
2011.09.16
Issuer
XZQ
XZQ
XZQ
WWW.SEMIPOWER.COM.CN
西安芯派电子科技有限公司
地址:西安市高新区高新一路25号创新大厦MF6
电话:029 - 88253717 传真:029 - 88251977
深圳市南方芯源科技有限公司
地址:深圳市福田区天安数码城时代大厦A座2005
电话:0755 - 83981818 传真:0755 - 83476838
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