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PDF SW1N70A Data sheet ( Hoja de datos )
| Número de pieza | SW1N70A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW1N70A
N-channel MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 15 Ω)@VGS=10V
■ Gate Charge (Max 5nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-92
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at AC adaptors and SMPS.
BVDSS : 700V
ID : 0.5A
RDS(ON) : 15ohm
2
1
3
Order Codes
Item
1
Sales Type
SW C 1N70A
Marking
SW1N70A
Package
TO-92
Packaging
TAPE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
700
0.5
0.3
2.0
± 30
52
0.3
4.5
3
0.023
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
RthCS
RthjA
Parameter
Thermal resistance, Junction to Lead Max
Thermal resistance, Junction to ambient
Value
40
120
Unit
oC/W
oC/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
1 page  
SAMWIN
SW1N70A
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VDS
DUT
VGS
QGS
QG
QGD
Charge
Fig. 13. Switching time test circuit & waveform
RG
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
10VIN
RG
L
IAS
VDS
DUT
VDD
BVDSS
IAS
EAS =
1
2 L X IAS2 X
BVDSS
BVDSS - VDD
ID(t)
tp
VDS(t)
time
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SW1N70A.PDF ] | |
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