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PDF SW7N60K Data sheet ( Hoja de datos )
| Número de pieza | SW7N60K | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW7N60K
N-channel TO-220F/I-PAK MOSFET
Features
TO-220F
TO-251
■ High ruggedness
■ RDS(ON) (Max 0.6Ω)@VGS=10V
■ Gate Charge (Typical 21nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12 3
12
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BVDSS : 600V
ID : 7.0A
RDS(ON) :0.6 ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW F 7N60
SW I 7N60
Absolute maximum ratings
Marking
SW7N60K
SW7N60K
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220F
TO-251
Packaging
TUBE
TUBE
Value
TO-220F
TO-251
600
7*
4.4*
28
± 30
120
8
24
19.8 166.7
0.16 1.33
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
TO-220F
TO-251
6.32 0.75
47.56
80.52
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
1/6
1 page  
SAMWIN
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VGS
VDS
DUT
10V
QGS
SW7N60K
QG
QGD
Charge
nC
Fig. 13. Switching time test circuit & waveform
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW7N60K.PDF ] | |
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