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Número de pieza | SW2N10 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | SEMIPOWER | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SW2N10 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SAMWIN
SW2N10
N-channel SOT-23 MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max0.24Ω)@VGS=10V
■ Gate Charge (Typical 13nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
SOT-23
3
2
1
1. Gate 2. Source 3. Drain
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 100V
ID : 2A
RDS(ON) :0.24Ω
2
1
3
Order Codes
Item
Sales Type
1 SW E 2N10
Absolute maximum ratings
Marking
SW2N10
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
TL purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Package
SOT-23
Packaging
RELL
Value
100
2*
1.26*
8
± 15
64
5
5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
oC
oC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
1/5
1 page SAMWIN
Fig. 10. Unclamped Inductive switching test circuit & waveform
SW2N10
Fig. 11. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SW2N10.PDF ] |
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