|
|
PDF SW6N60 Data sheet ( Hoja de datos )
| Número de pieza | SW6N60 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SW6N60 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
SAMWIN
SW6N60
N-channel MOSFET
Features
TO-220F
TO-251
TO-252
■ High ruggedness
■ RDS(ON) (Max 1.5Ω)@VGS=10V
■ Gate Charge (Typical 29nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
These N-channel enhancement mode power field effect transistors are produced using
SAMWIN’s proprietary, planar stripe, DMOS technology.
This advanced technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers
BVDSS : 600V
ID : 6A
RDS(ON) :1.5ohm
2
1
3
Order Codes
Item
1
2
3
Sales Type
SW F 6N60
SW I 6N60
SW D 6N60
Absolute maximum ratings
Marking
SW6N60
SW6N60
SW6N60
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
PD
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
TSTG, TJ Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
TL purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220F
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Value
TO-220F
TO-251/252
600
6.0*
24*
±30
230
20
4.5
TO-220F
TO-251/252
50 24
0.4 0.19
-55 ~ + 150
300
Unit
V
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
TO-220F
3.8
-
60
Value
TO-251 TO-252
5.3
-
60
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0
1/5
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW6N60
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SW6N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SW6N60 | MOSFET ( Transistor ) | SEMIPOWER |
| SW6N65 | MOSFET ( Transistor ) | SEMIPOWER |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |