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PDF SW226NV Data sheet ( Hoja de datos )
| Número de pieza | SW226NV | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW226NV
Features
IPAK
DPAK
■ High ruggedness
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typical 34nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12 3
2
13
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel MOSFET
BVDSS : 600V
ID : 4.0A
RDS(ON) : 2.5ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW I 226NV
SW D 226NV
Marking
SW226NV
SW226NV
Package
IPAK
DPAK
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 1)
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
600
4.0*
2.2*
16
± 30
342
32
4.5
270
2.16
-55 ~ + 150
300
Value
0.46
80
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0
1/5
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW226NV
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SW226NV.PDF ] | |
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