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PDF SW22N60U Data sheet ( Hoja de datos )
| Número de pieza | SW22N60U | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW22N60U
N-channel TO-3P MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 0.35Ω)@VGS=10V
■ Gate Charge (Typ 124 nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-3P
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching mode power appliances.
BVDSS : 600V
ID : 22A
RDS(ON) : 0.35Ω
2
1
3
Order Codes
Item
1
Sales Type
SWW 22N60
Marking
SW22N60U
Package
TO-3P
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS Drain to Source Voltage
ID
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
IDM Drain current pulsed
VGS Gate to Source Voltage
EAS Single pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
PD
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
TSTG, TJ Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
TL purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
600
22*
14*
88
± 30
583
100
5
520
4.2
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
0.24
0.3
36.1
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
1/5
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW22N60U
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SW22N60U.PDF ] | |
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