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Datasheet SW1314E-V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SW1314E-V | Chip LED Lamp Semiconductor
SW1314E-V
Chip LED Lamp
Features
• 1.6mm(L)×0.8mm small size surface mount type • Thin package of 0.4mm(H) thickness • Transparent clear lens optic • Low power consumption type chip LED
• E ; ESD Protected (±2.0kv, 3 times @100pF, 1.5kΩ)
Applications
• LCD backlighting |  AUK | led |
| 2 | SW1314E-V | Chip LED Lamp Semiconductor
SW1314E-V
Chip LED Lamp
Features
• • • • 1.6mm(L)×0.8mm small size surface mount type Thin package of 0.4mm(H) thickness Transparent clear lens optic Low power consumption type chip LED
• E ; ESD Protected (±2.0kv, 3 times @100pF, 1.5kΩ)
Applications
• • • • LC | AUK | led |
SW1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SW1 | 1W High Isolation 3kVdc Surface Mount DC-DC Converter SUPERWORLD ELECTRONICS
SW1 EHISM Series – 1W High Isolation 3kVdc Surface Mount DC-DC Converter
SW1 EHISM PRODUCT RANGE
Model SW105S05EHISMF SW105S12EHISMF SW105S15EHISMF SW105D05EHISMF Vin (nom) (Vdc) 5 5 5 5 5 5 12 12 12 12 12 12 15 15 15 15 15 15 24 24 24 24 24 24 Vout (Vdc) 5 12 15
±5 ± 12 �  Superworld Electronics converter | | |
| 2 | SW10-0312 | GaAs SPDT Reflective Switch / DC - 3 GHz with TTL/CMOS Control Input GaAs SPDT Reflective Switch, DC - 3 GHz with TTL/CMOS Control Input
V 5.00
SW10-0312
Features
n Integral TTL Driver n Low DC Power Consumption n Surface Mount Package n Low Cost/High Performance n 50 Ohm Nominal Impedance
CR-9
Description
M/A-COM’s SW10-0312 is a GaAs FET SPDT reflective swit  Tyco cmos | | |
| 3 | SW10-0313 | Matched GaAs SPDT Switch / DC - 3 GHz with TTL/CMOS Control Input Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input
V 4.00
SW10-0313
Features
n Integral TTL Driver n Low DC Power Consumption n Surface Mount Package n Low Cost/High Performance n 50 Ohm Nominal Impedance
CR-9
Description
M/A-COM’s SW10-0313 is a GaAs FET SPDT absorptive switch Tyco cmos | | |
| 4 | SW100N03 | N-channel MOSFET SAMWIN
SW100N03
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1
TO-220 TO-251
TO-252 TO-263
BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ
1 2 3
2
3
1
2
1 3
2
2 3 1 3
1. Gate  SAMWIN mosfet | | |
| 5 | SW100N10 | MOSFET, Transistor SAMWIN
SW100N10
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced  SEMIPOWER mosfet | | |
| 6 | SW100N10A | MOSFET, Transistor SAMWIN
SW100N10A
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 7.4m Ω)@VGS=10V ■ Gate Charge (Typ 127nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced SEMIPOWER mosfet | | |
| 7 | SW100N10B | MOSFET, Transistor SAMWIN
SW100N10B
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced SEMIPOWER mosfet | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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