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PDF SW630A Data sheet ( Hoja de datos )
| Número de pieza | SW630A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW630A
N-channel TO-220/D-PAK MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 0.4 Ω)@VGS=10V
■ Gate Charge (Typ 22nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220
TO-252
12
3
1
2
3
BVDSS : 200V
ID : 10A
RDS(ON) : 0.4ohm
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at high efficient DC to DC converter block and SMPS.
It’s typical application is TV and monitor.
1
3
Order Codes
Item Sales Type
1 SW P 630A
2 SW D 630A
Marking
SW630
SW630
Package
TO-220
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-252
200
10*
6.3*
40
±30
600
120
5
132 148
1.06 1.18
-55 ~ + 150
300
Value
TO-220
TO-252
0.95 0.85
0.5 -
57.5 -
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
oC/W
1/5
1 page  
SAMWIN
Fig. 12. Switching time test circuit & waveform
SW630A
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 13. Unclamped Inductive switching test circuit & waveform
Fig. 14. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
5/5
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| PDF Descargar | [ Datasheet SW630A.PDF ] | |
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