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PDF SW100N10B Data sheet ( Hoja de datos )
| Número de pieza | SW100N10B | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW100N10B
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness
■ RDS(ON) (Max 10.5m Ω)@VGS=10V
■ Gate Charge (Typ 106nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 100V
ID : 100A
RDS(ON) : 10.5mΩ
2
1
3
Order Codes
Item
1
Sales Type
SW P 100N10
Marking
SW 100N10B
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
100
100*
63*
400
± 20
1121
171
5
318
2.5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
0.39
0.5
51.6
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
1/5
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW100N10B
Fig.12 . Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SW100N10B.PDF ] | |
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