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Número de pieza | SVF7N65D | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silan Microelectronics | |
Logotipo | ||
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Microelectronics
SVF7N65CF/D/MJ/K/S/FQ/T
_Datasheet
7A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
2
11
3
3
1.Gate 2.Drain 3.Source TO-263-2L
12 3
TO-251J-3L
12 3
TO-262-3L
FEATURES
7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
TO-220F-3L
TO-252-2L
12 3
12 3
TO-220FQ-3L
TO-220-3L
NOMENCLATURE
SVFXNEXXCX
Package information. Example:
F:TO-220F; FQ: TO-220FQ;D:TO-252;
MJ:TO-251J; K:TO-262;
Silan VDMOS Code
S:TO-263;T:TO-220.
of F-Cell process
REV.
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
N denotes N Channel
Example: E denotes embeded ESD structure
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.8
Page 1 of 12
1 page Silan
Microelectronics
SVF7N65CF/D/MJ/K/S/FQ/T
_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100 -50 0
Notes:
1. VGS=0V
2. ID=250µA
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
Area(SVF7N65CF/FQ)
102
101
100
100µs
1ms
10ms
DC
Operation in this area
is limited by RDS(ON)
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.RDS(ON)[max]=1.4Ω
101
102
Drain Source Voltage - VDS(V)
103
Figure 9-3. Max. Safe Operating
102 Area(SVF7N65CMJ)
101
100
Operation in this area
is limited by RDS(ON)
100µs
1ms
10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.RDS(ON)[max]=1.4Ω
101
102
Drain Source Voltage - VDS(V)
103
Figure 8. On-resistance Variation
3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0
Notes:
1. VGS=10V
2. ID=3.5A
50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
102 Area(SVF7N65CD)
101
100µs
1ms
100
Operation in this area
is limited by RDS(ON)
10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.RDS(ON)[max]=1.4Ω
101
102
103
Drain Source Voltage - VDS(V)
Figure 9-4. Max. Safe Operating
102 Area(SVF7N65CK/S)
101
100µs
1ms
100
Operation in this area
is limited by RDS(ON)
10ms
DC
10-1
Notes:
1.TC=25°C
2.Tj=150°C
3.RDS(ON)[max]=1.4Ω
10-2
100 101
102
103
Drain Source Voltage - VDS(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.8
Page 5 of 12
5 Page Silan
Microelectronics
TO-220-3L
SVF7N65CF/D/MJ/K/S/FQ/T
_Datasheet
UNIT: mm
4.30
1.00
1.80
0.60
1.00
0.30
15.10
8.10
9.60
6.10
12.60
3.40
2.60
4.50
1.30
2.40
0.80
15.70
9.20
9.90
2.54BSC
6.50
13.08
3.70
4.70
1.50
2.80
1.00
1.60
0.70
16.10
10.00
10.40
7.00
13.60
3.95
3.90
3.20
Disclaimer :
• Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
• Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.8
Page 11 of 12
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SVF7N65D.PDF ] |
Número de pieza | Descripción | Fabricantes |
SVF7N65CF | MOSFET ( Transistor ) | Silan Microelectronics |
SVF7N65D | MOSFET ( Transistor ) | Silan Microelectronics |
SVF7N65F | 650V N-CHANNEL MOSFET | Silan Microelectronics |
SVF7N65FQ | MOSFET ( Transistor ) | Silan Microelectronics |
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