|
|
|
부품번호 | SVF8N70F 기능 |
|
|
기능 | MOSFET ( Transistor ) | ||
제조업체 | Silan Microelectronics | ||
로고 | |||
SVF8N70F_Datasheet
8A, 700V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF8N70F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 8A,700V,RDS(on)(typ)=0.95Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF8N70F
Package
TO-220F-3L
Marking
SVF8N70F
Material
Pb free
packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.09.09
Page 1 of 7
SVF8N70F_Datasheet
TYPICAL CHARACTERISTICS(continued)
2500
2000
Figure 5. Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
1500
1000
500
Ciss
Coss
Crss
Notes:
1. VGS=0V
2. f=1MHz
0
0.1 1 10 100
Drain-Source Voltage – VDS(V)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9. Max. Safe Operating Area
102
Operation in This Area is
Limited by RDS(ON)
101 100µs
1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 6. Gate Charge Characteristics
12
VDS=560V
10 VDS=350V
VDS=140V
8
6
4
2
Note: ID=8.0A
0
0 5 10 15 20 25
Total Gate Charge – Qg(nC)
Figure 8. On-resistance Variation
3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1. VGS=10V
2. ID=4.0A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 10. Maximum Drain Current vs.
Case Temperature
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
Case Temperature – TC(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.09.09
Page 4 of 7
4페이지 SVF8N70F_Datasheet
ATTACHMENT
Revision History
Date
2011.03.22
2011.09.09
REV
1.0
1.1
Description
Original
Modify “PACKAGE OUTLINE”
Page
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.09.09
Page 7 of 7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ SVF8N70F.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SVF8N70F | MOSFET ( Transistor ) | Silan Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |