|
|
PDF SVS4N65MJ Data sheet ( Hoja de datos )
| Número de pieza | SVS4N65MJ | |
| Descripción | TRANSISTOR | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SVS4N65MJ (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Silan
Microelectronics
SVS4N65F/MJ/D_Datasheet
4A, 650V DP MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS4N65F/MJ/D is an N-channel enhancement mode high voltage
power MOSFETs produced using the new platform of Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
2
1
3
1.Gate 2.Drain 3.Source
1
3
TO-252-2L
FEATURES
4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Extreme dv/dt rated
High peak current capability
123
TO-220F-3L
123
TO-251J-3L
ORDERING INFORMATION
Part No.
SVS4N65F
SVS4N65MJ
SVS4N65D
SVS4N65DTR
Package
TO-220F-3L
TO-251J-3L
TO-252-2L
TO-252-2L
Marking
SVS4N65F
SVS4N65MJ
SVS4N65D
SVS4N65D
Material
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tube
Tube
Tube
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Symbol
SVS4N65F
Ratings
SVS4N65MJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
650
±30
4.0
2.2
12
30 42
0.24 0.34
118
-55～+150
-55～+150
SVS4N65D
39
0.31
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 1 of 8
1 page  
Silan
Microelectronics
TYPICAL TEST CIRCUIT
SVS4N65F/MJ/D_Datasheet
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS
VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SVS4N65MJ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SVS4N65MJ | TRANSISTOR | Silan Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |