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Número de pieza | EMB99A0G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB99A0G (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! 2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
100V ‐100V
250mΩ 300mΩ
ID
2.2A
‐1.7A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
390°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/5/8
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB99A0G
LIMITS
N‐CH
P‐CH
±20 ±20
2.2 ‐1.7
1.8 ‐1.4
8.8 ‐6.8
1.38
0.75
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
36
90
UNIT
°C / W
p.1
1 page N‐Channel
5
On‐Region Characteristics
VG S = 10V
4
8.0V 7.0V
3
6.0V
2
1
5.0V
0
01
2
345
VD S ‐ Drain‐Source Voltage( V )
On‐Resistance Variation with Temperature
1.9
I D = 2.2A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25 0 25 50 75 100 125 150
T J ‐ Junction Temperature (°C)
Transfer Characteristics
6
VD S = 10V
5
4
3
T A = ‐55°C
25°C
2
125°C
1
0
23
45 6
VG S ‐ Gate‐Source Voltage( V )
2012/5/8
EMB99A0G
On‐Resistance Variation with Drain Current and Gate Voltage
1.7
1.6
VG S = 5.0 V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
6.0 V
7.0 V
8.0 V
10 V
123
I D ‐ Drain Current( A )
4
5
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 1.1 A
TA = 125°C
TA = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation with
100 Source Current and Temperature
V G S = 0V
10
1
0.1
T A = 125°C 25°C
‐55°C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage( V )
p.5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet EMB99A0G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB99A0G | Field Effect Transistor | Excelliance MOS |
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