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What is EMB32C03G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB32C03G Datasheet PDF - Excelliance MOS

Part Number EMB32C03G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 8 Pages



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No Preview Available ! EMB32C03G datasheet, circuit

 
 
N & PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary:   
  NCH  PCH 
BVDSS 
RDSON (MAX.) 
30V  ‐30V 
32mΩ  40mΩ 
ID 
6.5A 
6A 
 
 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
VGS 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
2012/10/25 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
 
 
EMB32C03G
LIMITS 
NCH 
PCH 
±20  ±20 
6.5  ‐6 
5.5  ‐5 
26  ‐24 
2 
0.8 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
25 
62.5 
UNIT 
°C / W 
p.1 

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EMB32C03G equivalent
 
NChannel 
 
 
24
OnRegion Characteristics
  VG S = 10V 6V
7V
  20
5V
  16
  12
4.5V
 8
 
4
 
 0
01
2
34
VD S  ‐ DrainSource Voltage( V )
 
5
 
  1.9
OnResistance Variation with Temperature
  I D  = 6.5A
VG S  = 10V
  1.6
  1.3
 
1.0
 
  0.7
  0.4
  50 25
0 25 50 75 100 125 150
T J  ‐ Junction Temperature (°C)
 
 
24
Transfer Characteristics
  VD S  = 10V
  20
  16
TA   = ‐55°C
25°C
  12
 8
125°C
 
4
 
0
  1 1.5 2.0
2.5 3.0
3.5
VG S  ‐ GateSource Voltage( V )
 
 
 
 
2012/10/25 
  EMB32C03G
OnResistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G  S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
5 10 15
I D  ‐ Drain Current( A )
20
25
OnResistance Variation with GateSource Voltage
0.09
0.08 I D  = 3 A
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
T A  = 125°C
T A  = 25°C
46
8
VG  S ‐ GateSource Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
VG S   = 0V
10
1
0.1
T A  = 125°C 25°C
55°C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2
VS D  ‐ Body Diode Forward Voltage( V )
1.4
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB32C03G electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMB32C03GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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