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PDF EMB15C04A Data sheet ( Hoja de datos )
| Número de pieza | EMB15C04A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
RDSON (MAX.)
N‐CH
40V
15mΩ
P‐CH
‐40V
30mΩ
D1
G1
D2
G2
ID
9A ‐7A
S1 S2
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/10/25
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB15C04A
LIMITS
N‐CH
P‐CH
±20 ±20
9 ‐7
7 ‐5.5
36 ‐28
21
13
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
6
42
UNIT
°C / W
p.1
1 page  
N‐Channel
35
On‐Region Characteristics
VG S = 10V
28
8.0V
7.0V
21
14
7
0
0
0.5 1.0
1.5 2.0 2.5
VD S ‐ Drain‐Source Voltage( V )
On‐Resistance Variation with Temperature
1.9
I D = 9A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25
50 75 100 125 150
T J ‐ Junction Temperature (°C)
Transfer Characteristics
30
VD S = 10V
25
20
T A = ‐55°C
15
25°C
10
5
125°C
0
3
4 56
VG S ‐ Gate‐Source Voltage( V )
7
2012/10/25
EMB15C04A
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4 VG S = 7.0 V
1.2
1.0
8.0 V
10 V
0.8
0
7 14 21
I D ‐ Drain Current( A )
28
35
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 4.5 A
TA = 125°C
TA = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
10 VG S = 0V
1
0.1 TA = 125°C 25°C
0.01
‐55°C
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2
VS D ‐ Body Diode Forward Voltage( V )
1.4
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMB15C04A.PDF ] | |
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