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PDF EMA60D03A Data sheet ( Hoja de datos )
| Número de pieza | EMA60D03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
RDSON (MAX.)
ID
N‐CH
25V
20mΩ
15A
P‐CH
‐25V
60mΩ
‐10A
D1
G1
S1
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
D2
G2
S2
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/10/25
ID
IDM
PD
Tj, Tstg
TYPICAL
EMA60D03A
LIMITS
N‐CH
P‐CH
±20 ±20
15 ‐10
10 ‐6.5
60 ‐40
21
8.3
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
6
90
UNIT
°C / W
p.1
1 page  
N‐Channel
30
On‐Region Characteristics
VG S = 10V 6V
25 7V 5V
20
4.5V
15
10
5
0
01
2
34
VD S ‐ Drain Source Voltage(V)
5
On‐Resistance Variation with Temperature
1.9
I D = 8A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25
50 75 100 125 150
T J ‐ Junction Temperature (° C)
30
Transfer Characteristics
VD S = 10V
25
20
T A = ‐55° C
25° C
15
10
125° C
5
0
1 1.5 2.0 2.5 3.0 3.5
VG S ‐ Gate‐Source Voltage( V )
2012/10/25
EMA60D03A
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
6 12 18
I D ‐ Drain Current(A)
24 30
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 4A
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
VG S = 0V
10 T A = 125° C
1 25° C
0.1 ‐55° C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage( V )
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMA60D03A.PDF ] | |
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