|
|
Número de pieza | EMDA4N20A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMDA4N20A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
140mΩ
ID 15A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 1mH, ID=11A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/4/9
EMDA4N20A
LIMITS
±30
15
10.5
60
11
60.5
30.2
69
27
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
1.8
62.5
UNIT
°C / W
p.1
1 page EMDA4N20A
10
Gate Charge Characteristics
I D = 7.5A
8
6
4
VD S = 50V
100V
2
0
0
30 60 90
Q g ‐ Gate Charge( nC )
120
100
Maximum Safe Operating Area
R D S (O N )Limit
10
100μs
1ms
10ms
100ms
1s
DC
1
VG S = 10V
Single Pulse
R JC = 1.8°C/W
0.1 TA = 25°C
1 10
100 1000
VD S ‐ Drain‐Source Voltage( V )
12000
9000
6000
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
3000
Coss
0 Crss
0
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
3000 RSθi n JC g =le 1 P.8u° Cls/eW
TC = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
※Note :
1. RθJC(t)=1.8°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
10‐2
single pulse
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100
t1,Time( sec )
101
2013/4/9
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMDA4N20A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMDA4N20A | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |