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Número de pieza | EMBE0N15A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBE0N15A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
D
RDSON (MAX.)
500mΩ
ID 3A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=2A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/6/12
EMBE0N15A
LIMITS
±20
3
2
12
2
0.2
0.1
25
10
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
5
62.5
UNIT
°C / W
p.1
1 page EMBE0N15A
10
Gate Charge Characteristics
I D = 1.5A
8
6
VD S = 50V 80V
4
2
0
0
5 10 15
Q g ‐ Gate Charge( nC )
20
1000
900
800
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
700
Ciss
600
500
400
300
200
Coss
100
0 Crss
0
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
100
M a xim um S afe O p era tin g A rea
10
1 R D S (O N )Limit
0.1
10uS
100uS
1mS
10mS
DC100mS
VG S = 10V
Single Pulse
R JA = 62.5°C/W
TA = 25°C
0.01
0.1 1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 62.5°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 62.5°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/6/12
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMBE0N15A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBE0N15A | Field Effect Transistor | Excelliance MOS |
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