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Número de pieza | EMB37N06A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB37N06A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
37mΩ
ID 20A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=15A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/7/24
EMB37N06A
LIMITS
±20
20
12
80
15
11.25
5.6
33
13
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.7
80
UNIT
°C / W
p.1
1 page EMB37N06A
Gate Charge Characteristics
10
I D = 15A
8
V D S = 15V 30V
6
4
2
0
05
10 15 20 25 30 35
Q g ‐ Gate Charge( nC )
1500
1350
1200
1050
Ciss
900
750
600
450
300
150
0
0
Coss
Crss
10
Capacitance Characteristics
f = 1MHz
V G S = 0 V
20 30 40 50
VD S ‐ Drain‐Source Voltage( V )
60
300
MAXIMUM SAFE OPERATING AREA
100
50 R d s (o n ) Limit
10μ s
10
100μ s
1ms
1
VG S = 10V
RSIθ N J C G= L3E. 7P° UC/LWSE
Tc = 25 °C
10ms
1D0C0ms
0.3
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 3.7°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time (sec)
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
1
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =3.7°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
t 1 ,Time ( mSEC )
1000
2012/7/24
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB37N06A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB37N06A | Field Effect Transistor | Excelliance MOS |
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