|
|
PDF EMB20N03A Data sheet ( Hoja de datos )
| Número de pieza | EMB20N03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB20N03A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID 15A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=15A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB20N03A
LIMITS
±20
15
10
60
15
11.25
5.5
41
16
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/8/17
TYPICAL
MAXIMUM
3
75
UNIT
°C / W
p.1
1 page  
10
Gate Charge Characteristics
I D = 15A
10V
8
VD S = 5V 15V
6
4
2
0
0
4 8 12
Q g ‐ Gate Charge( nC )
16
MAXIMUM SAFE OPERATING AREA
100 R d s ( o n ) Limit
10
10μ s
100μ s
1ms
DC10100mms s
1
VG S = 10V
RSIθ N J C G= L3E C P°/UWLSE
Tc = 25 °C
0.5
0.5 1
10 100
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time ( sec )
1
2013/8/17
EMB20N03A
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f = 1MHz
VG S = 0 V
Ciss
Coss
Crss
5 10 15 20 25
VD S ‐ Drain‐Source Voltage( V )
30
Single Pulse Maximum Power Dissipation
1200
Single Pulse
Rθ J C = 3 °C/W
TC = 25° C
1000
800
600
400
200
0 0.01
0.1 1
10
Single Pulse Time( mSEC )
100
1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J C =3° C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) + RθJC
10 100
1000
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB20N03A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB20N03A | Field Effect Transistor | Excelliance MOS |
| EMB20N03G | Field Effect Transistor | Excelliance MOS |
| EMB20N03Q | Field Effect Transistor | Excelliance MOS |
| EMB20N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |