EMB15N03A Datasheet PDF - Excelliance MOS
| Part Number | EMB15N03A | |
| Description | Field Effect Transistor | |
| Manufacturers | Excelliance MOS | |
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There is a preview and EMB15N03A download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
14mΩ
ID 25A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB15N03A
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
25
20
100
Avalanche Current
IAS 20
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=20A, RG=25Ω
L = 0.05mH
EAS
EAR
20
10
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
35
14
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362°C / W when mounted on a 1 in2 pad of 2 oz copper.
3.5
°C / W
62
2012/2/21
p.1
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Gate Charge Characteristics
10
I D = 15A
8
6
VD S = 5V
10V
15V
10 4
C a p a c ita n c e C h a ra c te ris tic s
10 3
C iss
EMB15N03A
4
10 2
C o ss
C rss
2
0
0
4
8
Q g ‐ Gate Charge( nC )
12
16
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
300
MAXIMUM SAFE OPERATING AREA
100 R d s (o n ) Limit
10μ s
100μ s
10
1ms
10ms
1D0C0ms
1
VG S = 10V
RSIθ N J C G= L3E. 5P° UC/LWSE
Tc = 25 °C
0.5
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Transient Thermal Response Curve
Single Pulse Maximum Power Dissipation
1200
Single Pulse
Rθ J C = 3.5° C/W
TC = 25° C
1000
800
600
400
200
0
0.01
0.1 1
10
Single Pulse Time( mSEC )
100
1000
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
1
t 1 ,Time (mSEC)
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 3.5°C/W
3.TJ ‐ T C = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
1000
2012/2/21
p.5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB15N03A electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ EMB15N03A.PDF Datasheet ] | |
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