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PDF EMB08N03A Data sheet ( Hoja de datos )
| Número de pieza | EMB08N03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
8mΩ
ID 55A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB08N03A
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
55
38
150
Avalanche Current
IAS 40
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=40A, RG=25Ω
L = 0.05mH
EAS
EAR
80
40
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
50
20
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2.5
°C / W
75
2012/12/30
p.1
1 page  
EMB08N03A
G a te C h a rg e C h a ra c te ris tic s
12
ID = 2 5 A
10
8
10 4
10 3
C a p a c ita n c e C h a ra c te ris tic s
C is s
6
4
2
V DS =5V
15V
10V
0
0 10 20
30
Q g ,G a te C h a rg e ( n C )
10 2
C o ss
C rss
10
0
f = 1 M H z
V GS= 0 V
5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
300
200
100 R d s (o n ) Limit
50
20
10
5
Maximum Safe Operating Area
10μ s
100μ s
1ms
10ms
D1C00ms
2
1
0.5
VG S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
0.5 1
23
5 10
20 30 50
VD S ,Drain‐Source Voltage( V )
3000
2500
2000
1500
1000
500
0
0.01
Single Pulse Maximum Power Dissipation
SINGLE PULSE
Rθ J C = 2.5° C/W
TC = 25° C
0.1 1 10 100
Single Pulse Time (SEC)
1000
1
Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =2.5°C/W
3.TJ ‐ T C = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
1 10 100
t 1 ,Time (sec)
1000
2012/12/30
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB08N03A.PDF ] | |
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