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PDF EMB04N03A Data sheet ( Hoja de datos )
| Número de pieza | EMB04N03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB04N03A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
4.0mΩ
ID 90A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB04N03A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
90
55
180
53
140
40
69
27
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
375°C / W when mounted on a 1 in2 pad of 2 oz copper.
1.8
°C / W
75
2012/2/27
p.1
1 page  
EMB04N03A
G a te C h a rg e C h a ra c te ris tic s
12
ID = 3 0 A
10 4
C a p a c ita n c e C h a ra c te ris tic s
10
C iss
8
6
4
V DS =5V
15V
10V
10 3
10 2
C rss
C o ss
2
0
0
20 40
60
Q g ,G a te C h a rg e ( n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D r a in ‐S o u r c e V o lta g e ( V )
30
M A X IM U M SA FE O P E R A T IN G A R E A
1000
1 0 0
R d s( o n ) L im it
10
1 0 μ s
1 0 0 μs
1ms
1
D
0C01m0 ms
s
1 V G S = 1 0 V
SIN G LE P U LSE
R θ J C = 1 . 8 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10
V D S , D R A I N ‐ S O U R C E V O L T A G E ( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSθI N JC G= L1E. 8P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
Transient Thermal Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2 10‐1
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C =1.8°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
1 10
t 1 ,Time ( mSEC )
100
1000
2012/2/27
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB04N03A.PDF ] | |
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