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PDF EMA20N03A Data sheet ( Hoja de datos )
| Número de pieza | EMA20N03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
20mΩ
ID 15A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=15A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMA20N03A
LIMITS
±20
15
10
60
15
11.25
5.5
42
16
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/8/28
TYPICAL
MAXIMUM
3
75
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 15A
V D S = 5V
8
10V
6
15V
4
2
0
0 4 8 12
Q g ‐ Gate Charge( nC )
16
300
Maximum Safe Operating Area
100
10
10μ s
100μ s
1ms
D1C001m0ms s
1
VG S = 10V
RSIθ N J C G= L3E C P°/UWLSE
Tc = 25° C
0.5
0.5 1
10
VD S ,Drain‐ Source Voltage( V )
100
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
Notes:
0.05
DM
0.02
0.03
0.01
0.02
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 3°C/W
Single Pulse
3.TJ ‐ T C = P * R θ J C (t)
0.01
4.Rθ J C (t)=r(t) * RθJC
10‐2 10‐1
1
10 100
t 1 ,Time (mSEC)
2013/8/28
EMA20N03A
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20 25
VD S ‐ Drain‐Source Voltage( V )
30
Single Pulse Maximum Power Dissipation
1200
1000
Single Pulse
Rθ J C = 3 °C/W
TC = 25° C
800
600
400
200
0 0.01
0.1 1 10
Single Pulse Time( mSEC )
100
1000
1000
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMA20N03A.PDF ] | |
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