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PDF EMA04N03A Data sheet ( Hoja de datos )
| Número de pieza | EMA04N03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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Hay una vista previa y un enlace de descarga de EMA04N03A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
4mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMA04N03A
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
80
50
170
Avalanche Current
IAS 53
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH
EAS
EAR
140
40
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
96
38
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
1.3
°C / W
75
2012/6/18
p.1
1 page  
EMA04N03A
G a te C h a rg e C h a ra c te ris tic s
12
ID = 3 0 A
10
8
6
V DS =5V
15V
10V
10 4
10 3
C a p a c ita n c e C h a r a c te r is tic s
C is s
C o ss
C rss
4
10 2
2
0
0 20 40 60
Q g ,G a te C h a rg e ( n C )
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V D S ‐D r a in ‐S o u r c e V o lt a g e ( V )
30
300
200
Maximum Safe Operation Area
10μ s
100 R d s ( o n ) Limit
100μ s
50
1ms
20
10
5
10ms
1D0C0ms
2
1
0.5
VG S = 10V
SINGLE PULSE
Rθ J C = 1.3° C/W
Tc = 25 °C
0.5 1
23
5 10
VD S ,Drain‐Source Voltage( V )
20 30
50
1
T ran sie nt T he rm al R e spo nse Cu rve
3000
2500
2000
1500
1000
500
0 0.01
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
0.01
Single Pulse
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e (sec)
1.Duty Cycle,D =
t1
t2
2 .R θ J C = 1 . 3 ° C / W
3 .TJ ‐ T C = P * R θ J C ( t )
4 .Rθ J C (t ) = r ( t ) * Rθ JC
100
Single Pulse Maximum Power Dissipation
RSθI N JC G= L1E. 3P° UC/LWSE
TC = 25° C
0.1 1 10 100
Single Pulse Time( sec )
1000
1000
2012/6/18
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMA04N03A.PDF ] | |
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