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Número de pieza | EMD04N80CS | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD04N80CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
800V
D
RDSON (MAX.)
3.0Ω
ID 4A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=4A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/17
EMD04N80CS
LIMITS
±30
4
2.5
16
4
24
4
30
12
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.2
96
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 2 A
15
12
9
6
V DS =200V
400V
3
0
0 3 6 9 12 15 18 21
Q g ,G a te C h a rg e ( n C )
100
Maximum Safe Operating Area
10
1
R D S ( O N ) Limit
0.1
VG S = 10V
Single Pulse
R J A = 96°C/W
TA = 25°C
100μs
1ms
10ms
100ms
1s
10s
DC
0.01
1
10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
EMD04N80CS
1000
900
800
700
600
500
400
300
200
100
0
10
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
20 30
40 50
60
VD S ‐ Drain‐Source Voltage( V )
70
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 96°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/12/17
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD04N80CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD04N80CS | Field Effect Transistor | Excelliance MOS |
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