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Número de pieza | EMBJ7N25CS | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBJ7N25CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
1.7Ω
ID 3.0A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=1A, RG=25Ω
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/8/6
EMBJ7N25CS
LIMITS
±20
3.0
1.9
12
1
1.5
0.5
30
13
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.2
62.5
UNIT
°C / W
p.1
1 page 10
Gate Charge Characteristics
I D = 1.5A
8
6
VD S = 62V 125V
4
2
0
0
100
5 10 15
Q g ‐ Gate Charge( nC )
M a x im u m S a fe O p e ra tin g A re a
10
R D S (O N )L im it
1
10uS
100uS
1mS
10
DC
0
10
mS
m
S
0 .1
V G S = 1 0 V
S in g le P u lse
R JC = 4 . 2 ° C / W
0.0 1
T C = 2 5 ° C
1 10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
20
1000
EMBJ7N25CS
1000
900
800
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
700 Ciss
600
500
400
300
200
100 Coss
0 Crss
0 20 40 60 80
VD S ‐ D rain‐Source V oltage( V )
100
Single Pulse Maximum Power Dissipation
3000 SRθi n JC g =le 4 P.2u Cl°s/eW
TC = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
0.1
10‐1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=4.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2012/8/6
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBJ7N25CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBJ7N25CS | Field Effect Transistor | Excelliance MOS |
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