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Número de pieza | EMBJ0N25CS | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBJ0N25CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
250V
D
RDSON (MAX.)
1Ω
ID 4.4A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=1A, RG=25Ω
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/8/6
EMBJ0N25CS
LIMITS
±20
4.4
2.6
17.6
1
1.5
0.5
29
11
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.2
62.5
UNIT
°C / W
p.1
1 page Gate Charge Characteristics
10
I D = 2.2A
8
6
VD S = 100V 200V
4
EMBJ0N25CS
1500
1350
1200
1050
900
750
600
450
Capacitance Characteristics
f = 1M Hz
Ciss V G S = 0 V
2
0
0
10 20 30
Q g ‐ Gate Charge( nC )
100
M a x im u m S a fe O p e ra tin g A re a
1 0 R D S (O N )L im it
1
10uS
100uS
1mS
100
DC
10
mS
m
S
0 .1
V G S = 1 0 V
S in g le P u lse
0 .0 1
R JC = 4 . 2 ° C / W
T C = 2 5 ° C
1 10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
40
1000
300 Coss
150
0 Crss
0
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
3000 SRθi n JC g =le 4 P.2u Cl°s/eW
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
10‐1 0.1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=4.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2012/8/6
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBJ0N25CS.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBJ0N25CS | Field Effect Transistor | Excelliance MOS |
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