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Número de pieza | EMD12N60F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD12N60F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
0.75Ω
ID 12A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 3mH, ID=12A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMD12N60F
LIMITS
±30
12
6.5
48
12
216
36
48
19
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.6
60
UNIT
°C / W
p.1
1 page G a te C h a rg e C h a ra c te ris tic s
18
ID = 8 A
15
12
9
6
3
V DS =150V
300V
0
0 48
12 16 20 24 28
Q g ,G a te C h a rg e ( n C )
100
Maximum Safe Operating Area
10 R D S ( O N ) Limit
1
0.1
VG S = 10V
Single Pulse
R J A = 60°C/W
TA = 25°C
100μs
1ms
10ms
100ms
1s
10s
DC
0.01
1
10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2013/12/20
EMD12N60F
1500
1350
1200
1050
900
750
600
450
300
150
0
10
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
20 30 40 50 60
VD S ‐ Drain‐Source Voltage( V )
70
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMD12N60F.PDF ] |
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